Structural and optical modeling of electro deposited CuInSe2 thin films
Laboratoire de Photovoltaíque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
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The ternary semiconductor CuInSe2 is one of the most advantageous materials for the manufacturing of thin film solar cells. In this study, CuInSe2 thin films were prepared at room temperature using the electrodepositing method. The as-prepared films were found to be amorphous. The CuInSe2 films were crystallized in a tubular resistive furnace, and characterized by means of the the X-ray diffraction (XRD) and UV-VIS-NIR spectroscopy techniques. The parameters to optimize are the temperature and duration of the annealing time, and the Cu/In ratio in the precursors.
Key words: Semiconductor / Chalcopyrite / thin layers / CuInSe2 / Photovoltaic
© Owned by the authors, published by EDP Sciences, 2012