Effect of Gaussian doping profile on the performance of a thin film polycrystalline solar cell
1 Research Unit Advanced and Control and Energy Management, ACEM, Department of Electrical Engineering, Sfax National Engineering School, University of Sfax, BP. 1173, 3038 Sfax, Tunisia
2 Department of Physics, Science Faculty of Sfax, University of Sfax, BP. 1171, 3000 Sfax, Tunisia
3 Electronic Laboratory and Information Technology, LETI, Department of Electrical Engineering, Sfax National Engineering School, University of Sfax, BP. 1173, 3038 Sfax, Tunisia
a e-mail: email@example.com
A two-dimensional (2D) analytical model based on the Green’s function method is applied to an n+-p thin film polycrystalline solar cell that allows us to calculate the conversion efficiency. This model considers the effective Gaussian doping profile in the p region in order to improve cell efficiency. The dependence of mobility and lifetime on grain doping is also investigated. This model is implemented through a simulation program in order to optimize conversion efficiency while varying thickness and doping profile in the base region of the cell. Compared with n+-p standard structure, our proposed structure shows a 43% improvement in conversion efficiency for a polycrystalline solar cell.
PACS: 85.30.De – Semiconductor-device characterization design and modelling / 88.40.hj – Efficiency and performance of solar cells
© Owned by the authors, published by EDP Sciences, 2012