Numerical simulation of barrier height effect on output parameters, for a a-Si:H/nc-Si:H based solar cell
Laboratoire de Physique des Plasmas, Matériaux Conducteurs et leurs Applications (LPPMCA), Université des Sciences et de la Technologie d’Oran. USTO “M.B.”, BP 1505 El-M’naouer. Oran 31000, Algérie
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A numerical simulation by AMPS-1D (Analysis of Microelectronic and photonic structures) program has been carried out to examine the role of the front contact barrier heights φb0 , ITO/P nanocrystalline layer contact, on the performances of a-Si:H n-i-p’-p solar cell with no back reflector. The p’-nc-Si:H buffer layer has been incorporated at the i/p interface in order to passivate the interface defects. Output parameters, like short circuit current (JSC), open circuit voltage (VOC), fill factor (FF) and efficiency (Eff); for n-i-p’-p structure, are numerically simulated using different values φb0. The short circuit current is not very affected by φb0. However, for high values of φb0 the other output cell parameters increase. The best values of VOC, FF and Efficiency can be obtained for a value of φb0 about 1.65 eV.
Key words: numerical simulation / solar cell / a-Si:H silicon / ITO / barrier height
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