Design and fabrication of anti-reflection coating on Gallium Phosphide, Zinc Selenide and Zinc Sulfide substrates for visible and infrared application
1 Research Centre for Special Optics
and Optoelectronic Systems (TOPTEC), Institute of Plasma Physics, Academy of Sciences
of the Czech Republic, Sobotecká
2 Institute of Mechatronics and Technical Engineering, Technical University of Liberec, Studentská 2, Liberec, CZ-46117, Czech Republic
a e-mail: email@example.com
Results of design and fabrication of a dual-band anti-reflection coating on a gallium phosphide (GaP), zinc selenide (ZnSe) and zinc sulfide (ZnS) substrates are presented. A multilayer stack structure of antireflection coatings made of zinc sulfide and yttrium fluoride (YF3) was theoretically designed for optical bands between 0.8 and 0.9 μm and between 9.5 and 10.5 μm. This stack was designed as efficient for these materials (GaP, ZnS, ZnSe) together. Multilayer stack structure was deposited using thermal evaporation method. Theoretically predicted transmittance spectra were compared with transmitted spectra measured on coated substrates. Efficiency of anti-reflection coating is estimated and discrepancies are analyzed and discussed.
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