Frequency upshift via flash ionization phenomena using semiconductor plasma
1 Graduate School of Engineering, Osaka University, 2-6 Yamada-oka, Suita, Osaka 565-0871, Japan
2 Japan Science and Technology Agency, CREST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
3 Department of Advanced Interdisciplinary Sciences, and Center for Optical Research & Education (CORE) Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585, Japan
4 Department of Physics, University of Nevada, Mail Stop 220, Reno, Nevada 89506, USA
Published online: 15 November 2013
We have demonstrated frequency upshift in the terahertz region by flash ionization. The magnitude of upshift frequency is tuned by the laser intensity. A proof of principle experiment has been performed with a plasma creation time scale much shorter than the period of the electromagnetic wave and a plasma length longer than its wavelength. Frequency upshifted from 0.35 to 3.5 THz by irradiating a ZnSe crystal with a ultra-short laser pulse has been observed.
© Owned by the authors, published by EDP Sciences, 2013
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 2.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.