XAFS studies of diluted magnetic semiconductor Mn-doped ZnSnAs2 thin films on InP substrates
1 Department of Electrical Engineering, Nagaoka University of Technology, Niigata, Japan
2 The Institute of Scientific and Industrial Research, Oosaka University, Oosaka, Japan
a Corresponding author: firstname.lastname@example.org
Published online: 3 July 2014
Mn-doped ZnSnAs2 (ZnSnAs2:Mn) thin films with 5.0 and 6.5% Mn composition were epitaxially grown by molecular beam epitaxy on InP (001) substrates. These films had a Curie temperature of 334 K, corresponding to room-temperature ferromagnetism. The local structures around Mn atoms in ZnSnAs2:Mn were studied by analysis of the X-ray absorption fine-structure spectra. It was found that the Mn atoms substitute into Zn or Sn cation sites, and the Mn‒As bond length is 2.50 Å, which is slightly smaller than the value of 2.53 Å in a sphalerite (zinc-blende) ZnSnAs2 bulk crystal. The Mn‒As bond length in ZnSnAs2:Mn is consistent with the value obtained from GaMnAs, and has a smaller value than that obtained from the zinc-blend MnAs thin films grown on a InP substrate.
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