Prediction of power semiconductors devices reliability working in cyclic mode
Tomsk Polytechnic university, Thermal Power Process Automation Department, Lenina Av. 30, 634050 Tomsk, Russia
a Corresponding author: email@example.com
Published online: 27 August 2014
A new approach prediction of reliability for power semiconductor devices in cyclic mode based on the numerical analysis of nonuniform temperature fields is proposed. We have compared the failure rates of semiconductor power devices in the real thermal regime under natural convection with statistical data. The necessity to consider the actual unsteady temperature fields to enhance the predicted working resource of the power semiconductor in cyclic mode is shown.
© Owned by the authors, published by EDP Sciences, 2014
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.