Improvements in Realizing 4H-SiC Thermal Neutron Detectors
1 IM2NP (UMR CNRS 7334) – Aix-Marseille University, Case 231 -13397 Marseille Cedex 20, France
2 KIT- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology, Karlsruhe 76344 Germany
3 SCK•CEN, Boeretang 200, 2400 Mol, Belgium
4 CEA, DEN, DER, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, 13108 St-Paul-Lez-Durance, France
5 University of Oslo, P.O. Box 1048 Blindern, 0316 Oslo, Norway
6 AMPERE (UMR 5005) – INSA de Lyon, 21 Av. Capelle, 69621 Villeurbanne, France
7 KTH-ICT, P.O. Box Electrum 229, 16440 Kista, Sweden
a Corresponding author: e-mail: email@example.com
Published online: 3 February 2016
In this work we presented two types of 4H-SiC semiconductor detectors (D1 and D2) both based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after the implantation and low signal to noise ratio. However, improvements concerning the implantation parameters and the distance between the implanted 10B thermal neutron converter layer and the active pn-junction have led to low leakage current and thus to higher signal to noise ratio. This proves the strength of this new method of realizing sensitive SiC-based thermal neutron detectors.
© Owned by the authors, published by EDP Sciences, 2016
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