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Cited article:

AES, EELS and TRIM simulation method study of InP(100) subjected to Ar⁺, He⁺ and H⁺ ions bombardment.

M. Ghaffour, A. Abdellaoui, M. Bouslama, A. Ouerdane, B. Abidri

EPJ Web of Conferences, 29 (2012) 00020

Published online: 2012-06-18

DOI: https://doi.org/10.1051/epjconf/20122900020

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Phase formation sequence in the Ti/InP system during thin film solid-state reactions

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CMOS-Compatible Contacts to n-InP

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