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Cited article:

Effect of InGaN thickness on assisted trap recombination and behaviour of InGaN/AlGaN double heterostructure LED

Shanise Rashid, M.Halim A. Wahid, N. Azura M. Ahmad Hambali, N.Syafira Abdul Halim, Mukhzeer M. Shahimin

EPJ Web Conf., 162 (2017) 01038

Published online: 2017-11-22

DOI: https://doi.org/10.1051/epjconf/201716201038

This article has been cited by the following article(s):

Stability, electronic and vibrational properties of GaAlN wurtzoid molecules and nanocrystals: A DFT study

Mudar Ahmed Abdulsattar, Mohammed T. Hussein and Tasneem H. Mahmood
Vacuum 153 17 (2018)
https://doi.org/10.1016/j.vacuum.2018.03.058