Research methods of reliability indicators of rectifier diode in tablet execution
Tomsk Polytechnic University, Lenina Av. 30, 634050 Tomsk, Russia
a Corresponding author: rinat email@example.com
Published online: 20 January 2015
A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered. We compared the failure rates of semiconductor power devices in real thermal regime with the thermal conductivity of the statistical data.
© Owned by the authors, published by EDP Sciences, 2015
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.