| Issue |
EPJ Web Conf.
Volume 185, 2018
Moscow International Symposium on Magnetism (MISM 2017)
|
|
|---|---|---|
| Article Number | 06007 | |
| Number of page(s) | 4 | |
| Section | Magnetic Semiconductors and Oxides | |
| DOI | https://doi.org/10.1051/epjconf/201818506007 | |
| Published online | 04 July 2018 | |
https://doi.org/10.1051/epjconf/201818506007
Quantum effects in magnetotransport of InGaAs quantum wells with remote Mn impurities
1
National Research Center "Kurchatov Institute", 123182 Moscow, Russia
2
P.N. Lebedev Physical Institute RAS, 119991 Moscow, Russia
3
Moscow Institute of Physics and Technology, 141700 Dolgoprudnyi, Moscow Region, Russia
4
National Research University Higher School of Economics, 101000 Moscow, Russia
5
M.V. Lomonosov Moscow State University, 119991 Moscow, Russia
* e-mail: Oveshln@gmail.com
Published online: 4 July 2018
We have studied magnetoresistance and Hall effect of GaAs/InxGa1−xAs quantum wells with remote Mn impurity. Temperature and magnetic field dependencies of samples resistivity indicate several effects related to the magnetic subsystem. Shubnikov - de Haas oscillations indicate the presence of several types of regions in conduction channel with significantly different hole mobilities. We discussed the impact of magnetic impurities on quantum corrections to conductivity by comparing our results with the data for similar non-magnetic structures. Our results suggest that the presence of Mn atoms leads to the damping of quantum corrections in in the investigated structures.
© The Authors, published by EDP Sciences, 2018
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