EPJ Web Conf.
Volume 185, 2018Moscow International Symposium on Magnetism (MISM 2017)
|Number of page(s)||4|
|Section||Magnetic Semiconductors and Oxides|
|Published online||04 July 2018|
Strain effect on resistivity of La0.7Ba0.3MnO3 thin film
Kotel’nikov Institute of Radio Engineering and Electronics, RAS, Moscow, 125009, Russia
2 Moscow Technological University, MISIS, Moscow, 119936, Russia
3 The Wave Research Center, Prokhorov General Physics Institute RAS, Moscow, 119991, Russia
a Corresponding author : email@example.com
Published online: 4 July 2018
A complex study of the dc and magnetic characteristics of epitaxial manganite films La0.7Ba0.3MnO3 (LBMO) was carried out under conditions of the crystal structure tension caused by a mismatch between the parameters of the LBMO crystal and the substrate. The epitaxial thin films with the thickness 150 nm were grown by laser ablation at T=700-800C under pure oxygen pressure 0.3-1 mbar. The substrates (001)LaAlO3, (001)SrTiO3, (110)NdGaO3, (001)[(LaAlO3)0.3+(Sr2AlTaO6)0.7] (LSAT) are used. It is shown that the temperature dependence of the film resistance in the low-temperature region does not depend on the film strain and it is in good agreement with the calculation that takes into account the interaction of carriers with magnetic excitations in the presence of strongly correlated electron states. The study of the of ferromagnetic resonance indicated the inhomogeneity of the ferromagnetic phase in LBMO films and an increase in the width of the FMR line with temperature decreasing.
© The Authors, published by EDP Sciences, 2018
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