| Issue |
EPJ Web Conf.
Volume 233, 2020
Portuguese Condensed Matter Physics National Conference (CMPNC 2019)
|
|
|---|---|---|
| Article Number | 03006 | |
| Number of page(s) | 5 | |
| Section | 2D Materials, Complex Systems and Statistical and Nonlinear Physics | |
| DOI | https://doi.org/10.1051/epjconf/202023303006 | |
| Published online | 16 April 2020 | |
https://doi.org/10.1051/epjconf/202023303006
Terahertz Frequency Comb in Graphene Field-Effect Transistors
1 Instituto de Plasmas e Fusão Nuclear, 1049-001 Lisboa, Portugal
2 Instituto Superior Técnico, 1049-001 Lisboa, Portugal
* Corresponding author: pedro.cosme.e.silva@tecnico.ulisboa.pt
Published online: 16 April 2020
Graphene Field-effect transistors (GFETs) are excellent candidates for all-electric, low-power radiation sources and detectors based on integrated circuit technology. In this work, we show that a hydrodynamic instability can be ex¬plored (the Dyakonov–Shur instability) to excite the graphene plasmons. The instability can be sustained with the help of a source-to-drain current and con¬trolled with the gate voltage. It is shown that the plasmons radiate a frequency comb in the Terahertz (THz) range. It is argued how this can pave the stage for a new generation of low power THz sources in integrated-circuit technology.
© The Authors, published by EDP Sciences, 2020
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