Mathematical Analysis of the C-V of Nanowires Based on Si and GaAs

¹ Gulistan State University, Syrdarya, Uzbekistan
² Tashkent University of Architecture and Construction, Tashkent, Uzbekistan
³ Bukhara State Pedagogical Institute, Bukhara, Uzbekistan
⁴ Tashkent University of Information Technologies named after Muhammad al- Khwarizmi, Tashkent, Uzbekistan

^* Corresponding author: This email address is being protected from spambots. You need JavaScript enabled to view it.

Published online: 3 March 2026

Abstract

In this study the electrical properties of the GaAs/Si radial heterojunction by measuring them at various temperatures of 50 K to 500 K separated by 50 K at a time and considering the values of band gap narrowing (BGN), built-in potential, band gap difference between GaAs and Si, capacitance-voltage (C-voltage) curves. Precisely, we study shell radii 500 nm and 1000 nm in the structure. We find that the thickness of the depletion region of the GaAs/Si radial heterojunction increases with temperature. The BGN decreases by 2 meV as the doping concentration changes by 2∙10^-1 to 2∙10^-2. Furthermore, the capacity power charge of the GaAs/Si radial heterojunction rises by 3 nF with hike in temperature between 50 K and 500 K. The inherent potential of the GaAs/Si radial heterojunction reduces by 1.5 volts with rise in temperature.