Issue |
EPJ Web of Conferences
Volume 15, 2011
LAM14 - XIV Liquid and Amorphous Metals Conference
|
|
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Article Number | 03004 | |
Number of page(s) | 5 | |
Section | Amorphous and nanostructured solids | |
DOI | https://doi.org/10.1051/epjconf/20111503004 | |
Published online | 18 May 2011 |
https://doi.org/10.1051/epjconf/20111503004
Transport properties of amorphous chalcogenides in the system Cu-Ag-Ge-As-Se in a broad range of temperatures and pressures
Department of Low-Temperature Physics, Ural State University, 51, Lenin ave., Ekaterinburg, 620083, Russia
Electrical and thermoelectrical properties of amorphous chalcogenides Cu1-xAgxGeAsSe3 (x = 0.51.0) were examined in the temperature interval from 10 to 400 K at atmospheric pressure and at 300 K under pressures to 50 GPa. All the materials were found to exhibit ionic or mixed electronic-ionic conductivity
© Owned by the authors, published by EDP Sciences, 2011
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