| Issue |
EPJ Web of Conferences
Volume 23, 2012
Eurasia-Pacific Summer School & Conference on Correlated Electrons
|
|
|---|---|---|
| Article Number | 00013 | |
| Number of page(s) | 4 | |
| DOI | https://doi.org/10.1051/epjconf/20122300013 | |
| Published online | 07 March 2012 | |
https://doi.org/10.1051/epjconf/20122300013
Tunneling conductance in a system with strong electron correlation
1 Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Korea
2 Asia Pacific Center for Theoretical Physics, Pohang 790-784, Korea
We discuss the structure of tunneling conductance, the dI/dV lineshape, observed for a system with strong electron correlation. The structure of the dI/dV lineshape comprises zero-bias peak and two side peaks. We discuss the condition for compressing zero-bias peak and the origin of two side peaks. We explain why the tunneling conductance does not simply reflect the sample density of states in the tunneling experiment for a system with strong electron correlation.
© Owned by the authors, published by EDP Sciences, 2012
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