| Issue |
EPJ Web of Conferences
Volume 35, 2012
Heavy Ion Accelerator Symposium on Fundamental and Applied Science 2012
|
|
|---|---|---|
| Article Number | 02005 | |
| Number of page(s) | 4 | |
| Section | Applied Nuclear Science and Radiation Detector Development | |
| DOI | https://doi.org/10.1051/epjconf/20123502005 | |
| Published online | 30 October 2012 | |
https://doi.org/10.1051/epjconf/20123502005
Charge transport properties of CdMnTe radiation detectors
1 Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW, 2234, Australia
2 Brookhaven National Laboratory, Upton, NY 11973 USA
3 Faculty of Mathematics and Physics, Institute of Physics, Charles University, Ke Karlovu 5, Prague 2, CZ-121 16, Czech Republic
a e-mail: rxr103@gmail.com
Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe) radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron drift velocity was calculated from the rise time distribution of the preamplifier output pulses at each measured bias. From the dependence of drift velocity on applied electric field the electron mobility was found to be μn = (718 ± 55) cm2/Vs at room temperature.
© Owned by the authors, published by EDP Sciences, 2012
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