EPJ Web of Conferences
Volume 41, 2013XVIIIth International Conference on Ultrafast Phenomena
|Number of page(s)||3|
|Section||Physics – Condensed Phase, Surfaces and Low Dimensional Systems|
|Published online||13 March 2013|
Depth-dependent Detection Mechanisms of Coherent Phonons in n-type GaAs
1 Nano-characterization Unit, National Institute for Materials Science, Tsukuba, 305-0047, Japan
2 Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
Transient reflectivity measurements at different probing wavelengths reveal detection mechanisms of coherent phonon and phonon-plasmon coupled modes of n-doped GaAs to be strongly depth-dependent due to the carrier depletion at the surface.
© Owned by the authors, published by EDP Sciences, 2013
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