| Issue |
EPJ Web of Conferences
Volume 82, 2015
Thermophysical Basis of Energy Technologies
|
|
|---|---|---|
| Article Number | 01030 | |
| Number of page(s) | 4 | |
| DOI | https://doi.org/10.1051/epjconf/20158201030 | |
| Published online | 20 January 2015 | |
https://doi.org/10.1051/epjconf/20158201030
Research methods of reliability indicators of rectifier diode in tablet execution
Tomsk Polytechnic University, Lenina Av. 30, 634050 Tomsk, Russia
a Corresponding author: rinat real@rambler.ru
Published online: 20 January 2015
A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered. We compared the failure rates of semiconductor power devices in real thermal regime with the thermal conductivity of the statistical data.
© Owned by the authors, published by EDP Sciences, 2015
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