EPJ Web Conf.
Volume 162, 2017International Conference on Applied Photonics and Electronics 2017 (InCAPE2017)
|Number of page(s)||6|
|Published online||22 November 2017|
Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode
Semiconductor Photonics & Integrated Lightwave Systems (SPILS), School of Microelectronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus, 02600 Malaysia.
2 Department of Electrical and Electronic Engineering, Faculty of Engineering, National Defence University of Malaysia (UPNM), Kem Sungai Besi, 57000 Kuala Lumpur.
* Corresponding author: email@example.com
Published online: 22 November 2017
Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (http://creativecommons.org/licenses/by/4.0/).
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