EPJ Web Conf.
Volume 162, 2017International Conference on Applied Photonics and Electronics 2017 (InCAPE2017)
|Number of page(s)||4|
|Published online||22 November 2017|
Annealing dependence on flexible p-CuGaO2/n-ZnO heterojunction diode deposited by RF sputtering method
Faculty of Science and Natural Resources, Universiti Malaysia Sabah, Jalan UMS, Kota Kinabalu, Sabah, 88400 Malaysia
2 Faculty of Engineering, Universiti Malaysia Sabah, Jalan UMS, Kota Kinabalu, Sabah, 88400 Malaysia
3 Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran, Hokkaido, 050-8585 Japan
* Corresponding author: email@example.com
Published online: 22 November 2017
In this work, p-CuGaO2/n-ZnO heterojunction diodes were deposited by RF powered sputtering method on polyethylene terephthalate (PETP, PET) substrates. Structural, morphology, optical and electrical properties of CuGaO2/ZnO heterojunction was investigated as a function of annealing duration. The structural properties show the ZnO films (002) peak were stronger at the range of 34° while CuGaO2 (015) peak is not visible at 44°. The surface morphology revealed that RMS roughness become smoother as the annealing duration increase to 30 minutes and become rougher as the annealing duration is increased to 60 minutes. The optical properties of CuGaO2/ZnO heterojunction diode at 30 minutes exhibit approximately 75% optical transmittance in the invisible region. The diodes exhibited a rectifying characteristic and the maximum forward current was observed for the diode annealed for 30 minutes. The diodes show an ideality factor range from 43.69 to 71.29 and turn on voltage between 0.75 V and 1.05 V.
© The Authors, published by EDP Sciences, 2017
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (http://creativecommons.org/licenses/by/4.0/).
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