EPJ Web Conf.
Volume 185, 2018Moscow International Symposium on Magnetism (MISM 2017)
|Number of page(s)||4|
|Published online||04 July 2018|
Magnetoelectric effect in ferromagnetic-semiconductor layered composite structures
Moscow Technological University, Moscow, Russia
2 Moscow State University, Moscow, Russia
3 Scientific and Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus
* Corresponding author: firstname.lastname@example.org
Published online: 4 July 2018
The results of magnetoelectric effect experimental studies in two different structures based on piezoelectric semiconductor gallium arsenide are presented. The monolithic structure consisted of a gallium arsenide substrate with deposited nickel layer (GaAs-Ni), and the composite structure contained a semiconductor substrate with an amorphous magnetic alloy (GaAs-Metglas) ribbon glued on one side. A quality factor Q ≈ 23500 and magnetoelectric coefficient of 316 V/Oe.cm were achieved at the frequency of planar acoustic oscillations for GaAs-Ni structure at room temperature.
© The Authors, published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.