Issue |
EPJ Web Conf.
Volume 201, 2019
The XXII International Scientific Conference of Young Scientists and Specialists (AYSS-2018)
|
|
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Article Number | 01001 | |
Number of page(s) | 5 | |
Section | Applied Research | |
DOI | https://doi.org/10.1051/epjconf/201920101001 | |
Published online | 04 February 2019 |
https://doi.org/10.1051/epjconf/201920101001
Ellipsometry as an express method for determining the pore parameters of ion-track SiO2 templates on a silicon substrate
1
Scientific and Practical Materials Research Centre of NAS of Belarus, 220072 Minsk, Belarus
2
Institute of physics of NAS of Belarus, 220072 Minsk, Belarus
3
State Scientific Institution “The Joint Institute for Power of Nuclear Research”, Sosny 220109, Belarus
* Corresponding author: dim2yakim@gmail.com
Published online: 4 February 2019
Due to the effective development of ion-track technology, it became possible to produce porous templates with large areas, which are of interest for mass production of nanostructures. Given that the template parameters often define properties of the resulting nanostructures and nanosystems, a reliable method for non-destructive testing is needed for a rapid control of template parameters. Such method could be ellipsometry, allowing for a single measurement to collect statistical information from a large area and to save time for certification. In order to adapt the ellipsometry method for controlling the parameters of ion-track patterns, the first studies of SiO2/Si templates with low porosity were carried out. Using the standard model of the interaction of a polarized light beam with a layered structure of silicon oxide on silicon, the basic parameters of the pores were determined by means of mathematical transformations and subsequently compared with the results of scanning electron microscopy.
© The Authors, published by EDP Sciences, 2018
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