EPJ Web Conf.
Volume 220, 2019XIII International Workshop on Quantum Optics (IWQO-2019)
|Number of page(s)||2|
|Published online||25 October 2019|
Method for determination of resists parameters for photonic - integrated circuits e-beam lithography on silicon nitride platform
Moscow State Pedagogical University, 119991 Moscow, Russia
2 Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, 420029 Kazan, Russia
3 National Research University Higher School of Economics, 101000 Moscow, Russia
Published online: 25 October 2019
In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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