EPJ Web Conf.
Volume 222, 2019The XXIV International Workshop “High Energy Physics and Quantum Field Theory” (QFTHEP 2019)
|Number of page(s)||5|
|Section||Experiment / Detectors / Data analysis|
|Published online||19 November 2019|
Micro alloying of SiC by radioisotope
2 Physical-Technical Institute of SPA “Physics-Sun”, Tashkent, Uzbekistan
Published online: 19 November 2019
The endotaxia is the process of growth of one crystal structure inside the volume of another. In this case we are talking about the formation of the Silicon Carbide film in the Silicon substrate. The Silicon substrate is placed in the gas chamber. The sample is exposed to the stream of methane gas CH4 at temperature of 1360 - 1380 ◦C and at normal pressure. Moreover, gas contains both the stable Carbon isotope C12 and the radioactive Carbon isotope C14, and hydrogen H2 in the gas acts as a carrier of Carbon.
© The Authors, published by EDP Sciences, 2019
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