| Issue |
EPJ Web Conf.
Volume 233, 2020
Portuguese Condensed Matter Physics National Conference (CMPNC 2019)
|
|
|---|---|---|
| Article Number | 01001 | |
| Number of page(s) | 5 | |
| Section | Topological Materials | |
| DOI | https://doi.org/10.1051/epjconf/202023301001 | |
| Published online | 16 April 2020 | |
https://doi.org/10.1051/epjconf/202023301001
Quantum effects in electrical transport properties of Bismuth chalcogenides Topological Insulators
1 CFisUC, Department of Physics, University of Coimbra, P-3004-516 Coimbra, Portugal
2 C²TN, DECN, Instituto Superior Técnico, University of Lisbon, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal
3 Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, D-01187 Dresden, Germany
* Corresponding author: jap@fis.uc.pt
Published online: 16 April 2020
Quantum effects such as weak-antilocalisation (WAL) behavior and Shubnikov-de Haas (SdH) oscillations in the electrical transport properties of topological insulators, measured on nanostructured polycrystalline samples and single-crystals of a series of bismuth chalcogenide compounds (Bi2(SexTe1-x)3, 0 ≤ x ≤ 1 and BiSbTe3), are presented and discussed.
© The Authors, published by EDP Sciences, 2020
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