EPJ Web Conf.
Volume 238, 2020EOS Annual Meeting (EOSAM 2020)
|Number of page(s)||2|
|Section||Topical Meeting (TOM) 13- Advances and Applications of Optics and Photonics|
|Published online||20 August 2020|
Crystallization of HfO2 thin films and their influence on laser induced damage
1 RhySearch, Optical Coatings Department, 9471 Buchs SG, Switzerland
2 Empa, Center for X-ray Analytics, 8600 Dübendorf ZH, Switzerland
* Corresponding author: firstname.lastname@example.org
Published online: 20 August 2020
We present our investigation on the crystallization of IBS HfO2 on (0001) SiO2. The crystallization was studied by in-situ XRD. The activation energy was 2.6±0.5 eV. The growth follows a two-dimensional mode. LIDT measurements (5000-on-1) with 10 ns pulses at 355 nm on 3QWT HfO2 layers shows that the crystallization leads to increase of the laser irradiation resistance. The 0%-LIDT of the as coated sample was 3.1 J/cm2 and increased to 3.7 J/cm2 after 5h @ 500°C.
© The Authors, published by EDP Sciences, 2020
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