Three-dimensional laser writing inside silicon using THz-repetition-rate trains of ultrashort pulses

Aix-Marseille Univ., CNRS, LP3 UMR 7341, 13009 Marseille, France

^* Corresponding author: andong.wang@univ-amu.fr; david.grojo@univ-amu.fr

Published online: 20 August 2020

Abstract

Three-dimensional laser writing inside silicon remains today inaccessible with the shortest infrared light pulses unless complex schemes are used to circumvent screening propagation nonlinearities. Here, we explore a new approach irradiating silicon with trains of femtosecond laser pulses at repetition rates up to 5.6 THz. This extremely high repetition rate is faster than laser energy dissipation from microvolume inside silicon, thus enabling unique capabilities for pulse-to-pulse accumulation of free carriers generated by nonlinear ionization, as well as progressive thermal bandgap closure before any diffusion process comes into play. By space-resolved measurements of energy delivery inside silicon, we evidence a net increase on the level of space-time energy localization. The improvement is also supported by experiments demonstrating an apparent decrease of the energy threshold for modification and drastic improvements on the repeatability, uniformity, and symmetricity of the produced features. The unique benefits of THz bursts can provide a new route to meet the challenge of 3D inscription inside narrow bandgap materials.