EPJ Web Conf.
Volume 255, 2021EOS Annual Meeting (EOSAM 2021)
|Number of page(s)||3|
|Section||Topical Meeting (TOM) 1- Silicon Photonics and Guided-Wave Optics|
|Published online||18 November 2021|
Heterostructured silicon-germanium-silicon p-i-n avalanche photodetectors for chip-integrated optoelectronics -INVITED
1 Dept. Multimedia and Information-Communication Technologies, University of Žilina,, 01026 Žilina, Slovakia
2 UniversitéParis-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
3 University Grenoble Alpes and CEA, LETI, 38054 Grenoble, France
4 STMicroelectronics, Silicon Technology Development, 38923 Crolles, France
Published online: 18 November 2021
Optical photodetectors are at the forefront of photonic research since the rise of integrated optics. Photodetectors are fundamental building blocks for chip-scale optoelectronics, enabling conversion of light into an electrical signal. Such devices play a key role in many surging applications from communication and computation to sensing, biomedicine and health monitoring, to name a few. However, chip integration of optical photodetectors with improved performances is an on-going challenge for mainstream optical communications at near-infrared wavelengths. Here, we present recent advances in heterostructured silicon-germanium-silicon p-i-n photodetectors, enabling high-speed detection on a foundry-compatible monolithic platform.
© The Authors, published by EDP Sciences, 2021
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