EPJ Web Conf.
Volume 255, 2021EOS Annual Meeting (EOSAM 2021)
|Number of page(s)||4|
|Section||Topical Meeting (TOM) 6- Optical Materials: Crystals, Thin Films, Organic Molecules and Polymers, Syntheses, Characterization and Devices|
|Published online||18 November 2021|
Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering
1 Politecnico di Milano, Department of Physics, Piazza Leonardo da Vinci, 32, 20133, Milano, Italy
2 CNST@PoliMi, Istituto Italiano di Tecnologia (IIT), Via Giovanni Pascoli 70/3, Milano, Italy
3 IFN-CNR CSMFO Laboratory and FBK Photonics Unit, Via alla Cascata 56/C Povo 38100 Trento, Italy
4 Fondazione Bruno Kessler (FBK)—Centro Materiali e Microsistemi (CMM), Via alla Cascata 56/C, 38123 Trento, Italy
5 Dipartimento di Chimica, Materiali e Ingegneria Chimica "Giulio Natta", Politecnico di Milano, Piazza L. da Vinci, 32 20133 Milano, Italy
6 Institute for Photonics and Nanotechnologies (IFN)—National Research Council (CNR), Piazza L. da Vinci, 32 20133 Milano, Italy
* Corresponding author: email@example.com
Published online: 18 November 2021
Key assets for transparent electric contacts in optoelectronic applications are high conductivity and large transparency over extended spectral range. Indium-Tin-Oxide and Aluminium-doped-Zinc-oxide are commercial examples, with their electrical conductivity resembling those of metals, despite, their transparency being limited up to 1.5µm. This work introduces smooth and compact amorphous thin films of n-type semiconducting WO3-x prepared by RF-sputtering followed by annealing in dry air, as optical layers of tailorable dielectric properties. We evaluate Figure of Merit, combining electrical conductivity and optical transparency, and rate the performances as a transparent conductive layer.
© The Authors, published by EDP Sciences, 2021
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