EPJ Web Conf.
Volume 255, 2021EOS Annual Meeting (EOSAM 2021)
|Number of page(s)||4|
|Section||Topical Meeting (TOM) 12- Optofluidics|
|Published online||18 November 2021|
Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG
1 Faculty of Electrical Engineering, Helmut Schmidt University, 22043, Hamburg, Germany
2 Institut für Laser-Physik, Universität Hamburg, Luruper Chaussee 149, 22761, Hamburg, Germany
3 The Hamburg Center for Ultrafast Imaging, Luruper Chaussee 149, 22761, Hamburg, Germany
4 Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489, Berlin, Germany
* Corresponding author: email@example.com
Published online: 18 November 2021
We investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz fs-laser system supplied by Coherent Inc. and selective etching of these structures for fabrication of ultrahigh aspect ratio microchannels. Usage of a diluted acid mixture of 22% H3PO4 and 24% H2SO4 accelerated the etching process significantly to an etching parameter D of 11.2 μm2/s, which is three times higher than previously reported. Additionally, the selectivity of the etching process was increased by an order of magnitude.
© The Authors, published by EDP Sciences, 2021
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