| Issue |
EPJ Web Conf.
Volume 266, 2022
EOS Annual Meeting (EOSAM 2022)
|
|
|---|---|---|
| Article Number | 01012 | |
| Number of page(s) | 2 | |
| Section | Topical Meeting (TOM) 1- Silicon Photonics and Guided-Wave Optics | |
| DOI | https://doi.org/10.1051/epjconf/202226601012 | |
| Published online | 13 October 2022 | |
https://doi.org/10.1051/epjconf/202226601012
Fabrication and optical characterization of erbium-doped silicon diode for quantum communication applications
1 L-NESS, Dip. Di Fisica del Politecnico di Milano, I–22100 Como, Italy
2 CNR-IMM, Via Santa Sofia 64, I–95123 Catania, Italy
3 Dip. di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, 20133 Milano Italy
4 Dip. di Fisica, Politecnico di Milano, I–20133 Milano Italy
5 Dip. di Ingegneria dell’Informazione, Università degli Studi di Padova, via Gradenigo 6B, IT-35131 Padova, Italy
6 InPhoTec, Integrated Photonic Technologies Foundation, I–56124 Pisa, Italy
7 IFN-CNR, L-NESS laboratory, 22100 Como, Italy
8 Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, I–20133 Milano, Italy
9 Dip. di Fisica “Aldo Pontremoli”, Università degli Studi di Milano, Via Celoria 16, I–20133 Milano, Italy
* e-mail: giulio.tavani@polimi.it
Published online: 13 October 2022
Quantum Key Distribution allows two users to exchange secret keys and it is based on the transmission of single photons or attenuated laser pulses. Recently, sources based on multiple single-photon emitters were demonstrated to be suitable for QKD. Here, we present a CMOS compatible multiple single-photon emitters source realized on a SOI wafer by a standard silicon diode doped with erbium ions. Particular emphasis is placed on the fabrication of such a device enhancing the erbium electroluminescence signal by adopting a proper oxygen co-doping. Finally, electroluminescence characterization at room temperature of the device is presented.
© The Authors, published by EDP Sciences
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