Towards harmonic generation enhancement on silicon

¹ Universitat Politècnica de Catalunya, Physics Department, Rambla Sant Nebridi 22, 08222 Terrassa, Spain
² Aviation and Missile Center, US Army CCDC, Redstone Arsenal, Huntsville, AL, United States
³ US Army Space & Missile Defense Command, Tech Center, Redstone Arsenal, AL 35898, United States

^* Corresponding author: laura.rodriguez.sune@upc.edu

Published online: 13 October 2022

Abstract

Nowadays, nanostructures are routinely fabricated and integrated in different photonic devices for a variety of purposes and applications. For instance, nonlinear silicon photonics is an area of interest due to its high compatibility with CMOS technology, offering structure sizes down to 10nm at low cost. When the nanoscale is reached, light-matter interactions can display new phenomena, conventional approximations may not always be applicable, and new strategies must be sought in order to study and understand light-matter interactions at the nanoscale. In this work, we report a comparative experimental and theoretical study of second and third harmonic generation from silicon with the aim of explaining the nonlinear optical properties of this material at the nanoscale. We measure second and third harmonic efficiencies as a function of angle of incidence, polarization and pump wavelength. We compare these measurements with numerical simulations based on a microscopic hydrodynamic model which accounts for different possible contributions to the nonlinear polarization. This way, we have the ability to explain properly the SH and TH signals arising from different silicon samples. Once we have this knowledge, we are able to design more complex structures, such as silicon nanowires, where higher conversion efficiencies can be achieved.