| Issue |
EPJ Web Conf.
Volume 266, 2022
EOS Annual Meeting (EOSAM 2022)
|
|
|---|---|---|
| Article Number | 09008 | |
| Number of page(s) | 2 | |
| Section | Topical Meeting (TOM) 9- Opto-electronic Nanotechnologies and Complex Systems | |
| DOI | https://doi.org/10.1051/epjconf/202226609008 | |
| Published online | 13 October 2022 | |
https://doi.org/10.1051/epjconf/202226609008
Light emission from color centers in phosphorus-doped diamond
1 University of Siegen, Laboratory of Nano-Optics, 57072 Siegen, Germany
2 Istituto Nazionale di Fisica Nucleare, Sezione di Firenze, 50019 Sesto Fiorentino, Italy
3 Fondazione Bruno Kessler, Centro Materiali e Microsistemi, 38122 Trento, Italy
4 Hasselt University & IMEC, Institute for Materials Research (IMO) & IMOMEC, 3590 Diepenbeek, Belgium
5 University of Oxford, Department of Materials, Oxford OX1 2PH, United Kingdom
6 Fraunhofer USA, Center for Coatings and Diamond Technologies, East Lansing, MI 48824, USA
7 University of Florence, Dipartimento di Fisica e Astronomia, 50019 Sesto Fiorentino, Italy
8 National Research Council (CNR), National Institute of Optics (INO), 50125 Florence, Italy
* Corresponding author: mario.agio@uni-siegen.de
Published online: 13 October 2022
Light emission from color centers in diamond is being extensively investigated for developing, among other quantum devices, single-photon sources operating at room temperature. By doping diamond with phosphorus, one obtains an n-type semiconductor, which can be exploited for the electrical excitation of color centers. Here, we discuss the optical properties of color centers in phosphorus-doped diamond, especially the silicon-vacancy center, presenting the single-photon emission characteristics and the temperature dependence aiming for electroluminescent single-photon emitting devices.
© The Authors, published by EDP Sciences
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