| Issue |
EPJ Web Conf.
Volume 266, 2022
EOS Annual Meeting (EOSAM 2022)
|
|
|---|---|---|
| Article Number | 10001 | |
| Number of page(s) | 2 | |
| Section | Topical Meeting (TOM) 10- Frontiers in Optical Metrology | |
| DOI | https://doi.org/10.1051/epjconf/202226610001 | |
| Published online | 13 October 2022 | |
https://doi.org/10.1051/epjconf/202226610001
Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers
Bundesanstalt für Materialforschung und -prüfung (BAM), Division 6.1 Surface Analysis and Interfacial Chemistry, D-12203, Unter den Eichen 44 - 46, Berlin, Germany
* Corresponding author: elena.ermilova@bam.de
Published online: 13 October 2022
Recent developments in power electronics require the use of new wide bandgap compound semiconductor. We demonstrate the use of the ellipsometry and white light interference microscopy to detect defects in epitaxially grown SiC layers on SiC substrates. Such hybrid optical metrology methods can be used to better understand the mechanism of the development of the defects as well as their effects on the material´s optoelectronic properties.
© The Authors, published by EDP Sciences
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.