Uncertainty Considerations that Impact the Use of Dosimetry Metrics in Modern Semiconductors

Sandia National Laboratories, Advanced Science and Technology Division, Albuquerque, NM, USA

^* Corresponding author: pjgriff@sandia.gov

Published online: 26 May 2023

Abstract

The use of calculated dosimetry metrics is a crucial element in predicting neutron damage to modern semiconductors under various conditions, e.g., control electronics in avionic systems, satellite sensors, or power output from solar panels. These dosimetry metrics have little value unless they are accompanied by a quantified uncertainty. This paper outlines a mathematical framework that captures the response models for most semiconductor damage metrics and addresses some of the challenges faced in quantifying the relevant sources of uncertainty. The energy-dependent correlations in the damage functions are a critical underpinning in propagating the uncertainty back to a measured quantity. Significant issues are associated with “model defect” in some of the models used, i.e., assumptions in the model form that are not easily considered in the uncertainty estimate. Other issues relate to fundamental differences between the experimental measured quantity and the calculated metric used to represent the damage mode.