| Issue |
EPJ Web Conf.
Volume 309, 2024
EOS Annual Meeting (EOSAM 2024)
|
|
|---|---|---|
| Article Number | 01012 | |
| Number of page(s) | 2 | |
| Section | Topical Meeting (TOM) 1- Silicon Photonics and Integrated Optics | |
| DOI | https://doi.org/10.1051/epjconf/202430901012 | |
| Published online | 31 October 2024 | |
https://doi.org/10.1051/epjconf/202430901012
Structural and optical characterization of hole-doped Ge/SiGe multiple quantum wells for mid-infrared photonics
1 Dipartimento di Fisica, Politecnico di Milano, Piazza L. da Vinci, 32, 20133, Milano, Italy
2 Peter Gruenberg Institute 9 (PGI 9), Forschungszentrum Jülich, 52428 Jülich, Germany
3 Dipartimento di Fisica “E. Fermi”, Università di Pisa, Largo Pontecorvo, 3, 56127, Pisa, Italy
* Corresponding author: marco.faverzani@polimi.it
Published online: 31 October 2024
The structural and optical properties of p-doped Ge quantum wells separated by SiGe barriers are presented. The composition profile was determined by atom probe tomography and X-ray diffraction measurements. The energy and broadening of the fundamental intersubband transition were studied by Fourier transform infrared spectroscopy which revealed a strong absorption peak around 8.5 μm making this or similar heterostructures suitable for the realization of optoelectronic devices working in the fingerprint region.
© The Authors, published by EDP Sciences, 2024
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