| Issue |
EPJ Web Conf.
Volume 309, 2024
EOS Annual Meeting (EOSAM 2024)
|
|
|---|---|---|
| Article Number | 08005 | |
| Number of page(s) | 2 | |
| Section | Topical Meeting (TOM) 8- Nonlinear and Quantum Optics | |
| DOI | https://doi.org/10.1051/epjconf/202430908005 | |
| Published online | 31 October 2024 | |
https://doi.org/10.1051/epjconf/202430908005
Hybrid III-V/Silicon photonic circuits embedding generation and routing of entangled photon pairs
1 Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Cité, 75013 Paris, France
2 Centre de Nanosciences et Nanotechnologies, Université Paris-Saclay, 91120 Palaiseau, France
3 STMicroelectronics, Technology & Design Platform, 38920 Crolles, France
4 Institut de Physique de Nice, Université Côte d’Azur, Sophia Antipolis, France
* e-mail: lorenzo.lazzari@u-paris.fr
Published online: 31 October 2024
Hybrid photonic devices, harnessing the advantages of multiple materials while mitigating their respective weaknesses, represent a promising solution to the effective on-chip integration of generation and manipulation of non-classical states of light encoding quantum information. We demonstrate a hybrid III-V/Silicon quantum photonic device combining the strong second-order nonlinearity and compliance with electrical pumping of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the spontaneous parametric down-conversion (SPDC) of photon pairs into an Al-GaAs source and their subsequent routing to a silicon-on-insulator circuitry. This enables the on-chip generation of broadband telecom photon pairs by type 0 and type 2 SPDC from the hybrid device, at room temperature and with strong rejection of the pump beam. Two-photon interference with 92% visibility proves the high energy-time entanglement quality characterizing the produced quantum state, thereby enabling a wide range of quantum information applications.
© The Authors, published by EDP Sciences, 2024
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