Atomic layer deposition for hafnium oxide-based meta-optics in the ultraviolet spectral range

¹ Friedrich-Schiller-University, Institute of Applied Physics, Albert-Einstein-Strasse 15, 07745 Jena, Germany
² Micro-and Nanostructured Optics, Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena, Germany
³ Department of Plasma Physics and Technology, Faculty of Science, Masaryk University, Kotlářská 2, 61137 Brno, Czechia
⁴ TU Braunschweig, Institute of Semiconductor Technology, Langer Kamp 6a, 38106 Braunschweig, Germany
⁵ Metrology for Functional Nanosystems Working Group 4.01, Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany

^* Corresponding author: This email address is being protected from spambots. You need JavaScript enabled to view it.

Published online: 22 September 2025

Abstract

Hafnium oxide (HfO₂) is of increasing interest in both microelectronics and photonics due to its favorable optical and dielectric properties. In particular, its high refractive index, wide bandgap, and chemical stability render it attractive for optical coatings and metasurfaces down to the ultraviolet spectral range. Atomic layer deposition (ALD) has been commonly employed to produce high-quality HfO₂ films. In this contribution we are reporting on the measured refractive index from a wavelength of 120 nm to 600 nm.