| Issue |
EPJ Web Conf.
Volume 335, 2025
EOS Annual Meeting (EOSAM 2025)
|
|
|---|---|---|
| Article Number | 11002 | |
| Number of page(s) | 2 | |
| Section | Focused Session - Mid-Infrared Photonics: Materials, Devices, and Applications | |
| DOI | https://doi.org/10.1051/epjconf/202533511002 | |
| Published online | 22 September 2025 | |
https://doi.org/10.1051/epjconf/202533511002
Design and Simulation of SWIR nBn-InGaAs Photodetector with AlGaAs Barrier
1 Nanotechnology Research Center, Bilkent University, 06800 Ankara, Turkey
2 Department of Physics Engineering, Ankara University, 06560 Ankara, Turkey
3 Department of Physics, Bilkent University, 06800 Ankara, Turkey
4 Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey
5 Department of Materials Science and Nanotechnology Engineering, TOBB University of Economics and Technology, Ankara 06560, Turkey
* Corresponding author: This email address is being protected from spambots. You need JavaScript enabled to view it.
Published online: 22 September 2025
Abstract
The article discusses the simulation of an nBn-InGaAs photodetector using Silvaco TCAD at 300 K, focusing on optimizing the barrier performance and reducing the valence band offset. It explores the device’s electrical and optical behaviors, including dark current, photocurrent, and capacitance. The results show a peak responsivity of 0.91 A/W at 1.55 µm and a junction capacitance of 9 pF at −5 V. Adding an anti-reflection coating notably improved the optical performance, highlighting the structure’s potential for efficient infrared photodetection.
© The Authors, published by EDP Sciences, 2025
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