| Issue |
EPJ Web Conf.
Volume 338, 2025
ANIMMA 2025 – Advancements in Nuclear Instrumentation Measurement Methods and their Applications
|
|
|---|---|---|
| Article Number | 10010 | |
| Number of page(s) | 4 | |
| Section | Current Trends in Development Radiation Detectors | |
| DOI | https://doi.org/10.1051/epjconf/202533810010 | |
| Published online | 06 November 2025 | |
https://doi.org/10.1051/epjconf/202533810010
SiC-based detectors for fast neutron measurements in a multi-energy field
1 Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France.
2 CEA, DES, IRESNE, DER, F-13108 Saint-Paul-Lez-Durance, France.
3 CEA, IRFM, F-13108 Saint-Paul-lez-Durance, France.
* This email address is being protected from spambots. You need JavaScript enabled to view it.
Published online: 6 November 2025
Abstract
Wide-bandgap semiconductor detectors like silicon carbide (SiC) are promising for fusion and fission environments due to their radiation hardness and thermal/mechanical stability. The 4H-SiC diodes studied, with a 60 µm ”p-n” junction, collect charge carriers generated by neutron reaction products and gammas. The resulting signal provides information on fast neutron energy. Previous studies in mono-energetic fields showed promising results for estimating fast neutron flux, but characterizing the sensor’s response in multi-energetic fields remains challenging. In this work, the calibration of 4H-SiC response functions was performed using Time-of-Flight (ToF) measurements at the Neutron For Science (NFS) facility of GANIL, which allowed the construction of a response matrix. The presented results are promising, providing a response matrix with enough energy channels that can be used for neutron spectrum unfolding purposes.
Key words: Fast neutrons / Semiconductor Detectors / Silicon Carbide / Radiation Detection
© The Authors, published by EDP Sciences, 2025
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