Sol-gel derived screen-printed Al-doped ZnO (Zn_0.95Al_0.05O) film: Preparation, characterization and optoelectronic applications

¹ Department of Applied Sciences, KIET Group of Institutions, Delhi NCR, Ghaziabad, INDIA
² Naturality R&D, Calle Sant Leopold 101, Terrassa, Barcelona, SPAIN
³ Strentex Innovations D.O.O., 21000 Novi Sad, SERBIA
⁴ Department of Physics, University Institute of Engineering and Technology, Guru Nanak University, Ibrahimpatnam, Telangana, INDIA
⁵ Photonics and Photovoltaic Research Lab, Department of Physics and Material Science, Madan Mohan Malaviya University of Technology, Gorakhpur, INDIA
⁶ School of Electrical and Electronics Information Engineering, Hubei Polytechnic University, Huangshi, Hubei, CHINA

^* Corresponding author: This email address is being protected from spambots. You need JavaScript enabled to view it.

Published online: 5 March 2026

Abstract

The fabrication of Al-doped ZnO (Zn_0.95Al_0.05O) film was achieved through a simple and cost-effective sol-gel method associated with screen printing. The structural and optical features of the fabricated film were investigated via X-ray diffraction (XRD) and UV-Vis spectroscopy techniques, respectively. XRD analysis confirmed that the nature of the prepared film is polycrystalline, featuring a hexagonal structure. The optical bandgap obtained from UV-Vis analysis was established at 3.35 eV. The electrical characteristics of the film were examined using Hall measurement, revealing that it exhibits n-type conductivity with low resistivity of approximately 1.02 × 10⁻³ Ohm cm. These outcomes collectively suggest that Al-doped ZnO films can be effectively used in industrial production of optoelectronic devices.