Open Access
Issue
EPJ Web Conf.
Volume 338, 2025
ANIMMA 2025 – Advancements in Nuclear Instrumentation Measurement Methods and their Applications
Article Number 10009
Number of page(s) 6
Section Current Trends in Development Radiation Detectors
DOI https://doi.org/10.1051/epjconf/202533810009
Published online 06 November 2025
  1. R. Wei et al., “Thermal conductivity of 4H-SiC single crystals,” J. Appl. Phys., vol. 113, no. 5, 053503, Feb. 2013, doi: 10.1063/1.4790134. [Google Scholar]
  2. N. Gál, L. Hrubčín, A. Šagátová, G. Vanko, E. Kováčová, and B. Zaťko, “High-resolution alpha-particle detector based on Schottky barrier 4HSiC detector operated at elevated temperatures up to 500 °C,” Appl. Surf. Sci., vol. 635, p. 157708, Oct. 2023, doi: 10.1016/j.apsusc.2023.157708. [Google Scholar]
  3. F. H. Ruddy, L. Ottaviani, A. Lyoussi, C. Destouches, O. Palais, and C. Reynard-Carette, “Silicon Carbide Neutron Detectors for Harsh Nuclear Environments: A Review of the State of the Art,” IEEE Trans. Nucl. Sci., vol. 69, no. 4, pp. 792–803, Apr. 2022, doi: 10.1109/TNS.2022.3144125. [CrossRef] [Google Scholar]
  4. B. Zaťko et al., “Radiation detector based on 4H-SiC used for thermal neutron detection,” J. Instrument., 11, C11022, Nov. 2016, doi: 10.1088/1748-0221/11/11/C11022. [Google Scholar]
  5. V. Valero et al., “In-core thermal and fast neutron measurements with 4H-SiC P+N junction diodes in the JSI TRIGA Mark II research reactor,” EPJ Nucl. Sci. Technol., vol. 11, July 2025, doi: 10.1051/epjn/2025024. [Google Scholar]
  6. B. Zaťko et al., “Schottky barrier detectors based on high quality 4HSiC semiconductor: Electrical and detection properties,” Appl. Surf. Sci., vol. 461, pp. 276–280, Dec. 2018, doi: 10.1016/j.apsusc.2018.08.082. [Google Scholar]
  7. B. Zaťko et al., “Study of Schottky barrier detectors based on a high quality 4H-SiC epitaxial layer with different thickness,” Appl. Surf. Sci., vol. 536, 147801, Jan. 2021, doi: 10.1016/j.apsusc.2020.147801. [Google Scholar]
  8. G. Bertuccio, R. Casiraghi, and F. Nava, “Epitaxial silicon carbide for X-ray detection,” IEEE Trans. Nucl. Sci., vol. 48, no. 2, pp. 232–233, Apr. 2001, doi: 10.1109/23.915369. [Google Scholar]
  9. G. Bertuccio, R. Casiraghi, A. Cetronio, C. Lanzieri, and F. Nava, “Silicon carbide for high resolution X-ray detectors operating up to 100°C,” Nucl. Instrum. Methods Phys. Res., Sect. A, vol. 522, no. 3, pp. 413–419, Apr. 2004, doi: 10.1016/j.nima.2003.11.413. [Google Scholar]
  10. G. Bertuccio, S. Caccia, D. Puglisi, and D. Macera, “Advances in silicon carbide X-ray detectors,” Nucl. Instrum. Methods Phys. Res., Sect. A, vol. 652, no. 1, pp. 193–196, Oct. 2011, doi: 10.1016/j.nima.2010.08.046. [Google Scholar]
  11. N. Kurucová, A. Šagátová, E. Kováčová, and B. Zaťko, “Effect of Epitaxial Layer Thickness on the Electrical Properties of SiC Detectors,” to be published in AIP Conf. Proc., 2025. [Google Scholar]

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