EPJ Web of Conferences
Volume 40, 2013JEMS 2012 – Joint European Magnetic Symposia
|Number of page(s)||4|
|Section||Sensors, MEMS and magnetic devices|
|Published online||14 January 2013|
Hall current sensor IC with integrated Co-based alloy thin film magnetic concentrator
Smart Power Technology R&D,
STMicroelectronics, Via C.Olivetti 2, 20041
2 Institute of Materials for Electronics and Magnetism (IMEM), CNR, Parco Area delle Scienze 37/A, 43124 Parma, Italy
This work deals with a cobalt-based alloy thin film magnetic concentrator (MC) which is fully integrated on a Hall sensor integrated circuit (IC) developed in the 0.35 µm Bipolar CMOS DMOS (BCD) technology on 8” silicon wafer. An amorphous magnetic film with a thickness of 1µm, coercitive field Hc<10A/m and saturation magnetization (µ0MS) of 0.45T has been obtained with a sputtering process. The Hall sensor IC has shown sensitivity to magnetic field at room temperature of 240V/AT without concentrator and 2550V/AT with concentrator, gaining a factor of 10.5. A current sensor demonstrator has been realized showing linear response in the range -50 to 50A.
© Owned by the authors, published by EDP Sciences, 2013
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.