Magnetotransport of indium antimonide doped with manganese

¹ Department of Mathematics and Physics, Lappeenranta University of Technology, PO Box 20, FIN-53851 Lappeenranta, Finland
² P.N. Lebedev Physical Institute RAS, Leninskiy prospekt, 53, Moscow, Russia
³ South-West State University, 50 let Oktjabrja Str., 305040 Kursk, Russia
⁴ Institute of Applied Physics ASM, Academiei Str. 5, MD-2028 Kishinev, Moldova
⁵ A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia

Published online: 3 July 2014

Abstract

Magnetotransport, including the magnetoresistance (MR) and the Hall effect, isinvestigated in polycrystalline In_1-xMn_xSb samples with x = 0.02 – 0.06, containing nanosize MnSb precipitates. The relative MR, Δρ/ρ, is positive within the whole range of B= 0 – 10 T and T ~ 20 – 300 K. The Hall resistivity, ρ_H, exhibits a nonlinear dependence on B up to the room temperature.MR is interpreted with the two-band model, suggesting two types of holes with different concentration and mobility. In addition, analysis of ρ_H (B, T) is performed by taking into account both the normal and the anomalous contributions. The latter is attributable to the effect of MnSb nanoprecipitates, having the ferromagnetic Curie temperature well above 300 K.