Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 31, Kashirskoye Shosse, 115409, Moscow, Russian Federation telephone: 007-495-323-9038

e-mail: v-samedov@yandex.ru

Published online: 10 January 2018

Abstract

Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.