Issue |
EPJ Web Conf.
Volume 170, 2018
ANIMMA 2017 – Advancements in Nuclear Instrumentation Measurement Methods and their Applications
|
|
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Article Number | 09010 | |
Number of page(s) | 4 | |
Section | Environmental and medical sciences | |
DOI | https://doi.org/10.1051/epjconf/201817009010 | |
Published online | 10 January 2018 |
https://doi.org/10.1051/epjconf/201817009010
Radiation dose response of N channel MOSFET submitted to filtered X-ray photon beam
Comissão Nacional de Energia Nuclear (CNEN/CRCN-NE) and with Universidade Federal de Pernambuco (UFPE), Av. Prof. Luiz Freire, 200, Recife, 50740-545
lcar.br@hotmail.com
Universidade Federal de Pernambuco (UFPE), Av. Prof. Luiz Freire, 1000, Recife, 50740-545, and with SCIENTS, Estrada do Monjope, 5100, Igarassu, 53645-337
dsmonte@scients.com.br
Comissão Nacional de Energia Nuclear (CNEN/CRCN-NE), Av. Prof. Luiz Freire, 200, Recife, 50740-545, and with SCIENTS, Estrada do Monjope, 5100, Igarassu, 53645-337 Brazil
frbarros12@gmail.com; lasantos@scients.com.br
Published online: 10 January 2018
MOSFET can operate as a radiation detector mainly in high-energy photon beams, which are normally used in cancer treatments. In general, such an electronic device can work as a dosimeter from threshold voltage shift measurements. The purpose of this article is to show a new way for measuring the dose-response of MOSFETs when they are under X-ray beams generated from 100kV potential range, which is normally used in diagnostic radiology. Basically, the method consists of measuring the MOSFET drain current as a function of the radiation dose. For this the type of device, it has to be biased with a high value resistor aiming to see a substantial change in the drain current after it has been irradiated with an amount of radiation dose. Two types of N channel device were used in the experiment: a signal transistor and a power transistor. The delivered dose to the device was varied and the electrical curves were plotted. Also, a sensitivity analysis of the power MOSFET response was made, by varying the tube potential of about 20%. The results show that both types of devices have responses very similar, the shift in the electrical curve is proportional to the radiation dose. Unlike the power MOSFET, the signal transistor does not provide a linear function between the dose rate and its drain current. We also have observed that the variation in the tube potential of the X-ray equipment produces a very similar dose-response.
Key words: MOSFET / Radiation / Dosimeter
© The Authors, published by EDP Sciences, 2018
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (http://creativecommons.org/licenses/by/4.0/).
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