EPJ Web Conf.
Volume 195, 20183rd International Conference “Terahertz and Microwave Radiation: Generation, Detection and Applications” (TERA-2018)
|Number of page(s)||2|
|Section||Detection of THz & MW Radiation. Metrology in THz Frequency Range|
|Published online||23 November 2018|
Technology for NbN HEB based multipixel matrix of THz range
Department of Physics, Moscow State University of Education, 29 Malaya Pirogovskaya St, Moscow, 119435, Russia
Published online: 23 November 2018
—The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.
© The Authors, published by EDP Sciences, 2018
This is an open access article distributed under the terms of the Creative Commons Attribution License 4.0 (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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