EPJ Web Conf.
Volume 196, 2019XV All-Russian School-Conference of Young Scientists with International Participation “Actual Problems of Thermal Physics and Physical Hydrodynamics”
|Number of page(s)||4|
|Published online||14 January 2019|
The changing of silicon suboxide film thickness as a result of high temperature annealing
1 Kutateladze Institute of Thermophysics SB RAS, 630090, Ac. Lavrentiev ave. 1, Novosibirsk, Russia
2 Novosibirsk State University, 630090, Pirogova str. 2, Novosibirsk, Russia
* Corresponding author: firstname.lastname@example.org
Published online: 14 January 2019
The a-SiOx:H thin films were deposited by the gas-jet electron beam plasma chemical vapor deposition method with different stoichiometry (x=0.15-1.0) for different SiH4 flow rates. The concentration of hydrogen in the films increases with the growth rate in ranges from 1.5 to 4.8 at.%. Further annealing leads to the effusion of hydrogen from the structure of the material and the compression of the structure, which leads to a reduction in the thickness for all films. X-ray diffraction measurements showed that the as-deposited films crystallized to form nc-Si about 4-8 nm in size after annealing at 1000°C.
© The Authors, published by EDP Sciences, 2019
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.